| PART |
Description |
Maker |
| MB81N643289 MB81N643289-50 MB81N643289-60 |
8 x 256K x 32 BIT DOUBLE DATA RATE FCRAMTM
MEMORY 8 x 256K x 32 BIT DOUBLE DATA RATE FCRAM
|
Fujitsu Microelectronics
|
| MB81N643289 |
DRILL BIT HIGH SPEED STEEL .021,1
8 x 256K x 32 BIT DOUBLE DATA RATE FCRAMTM
|
Fujitsu Limited
Fujitsu Component Limited.
|
| MB81P643287 |
MEMORY CMOS 8 x 256K x 32 BIT, FCRAM CORE BASED DOUBLE DATA RATE SDRAM
|
Fujitsu Microelectronics
|
| MH16D64AKQC-75 MH16D64AKQC-10 |
1,073,741,824-BIT (16,777,216-WORD BY 64-BIT) Double Data Rate Synchronous DRAM Module
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MH32D64AKQJ-75 MH32D64AKQJ-10 |
2,147,483,684-BIT (33,554,432-WORD BY 64-BIT) Double Data Rate Synchronous DRAM Module
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MH64D72KLG-75 MH64D72KLG-10 |
4,831,838,208-BIT (67,108,864-WORD BY 72-BIT) Double Data Rate Synchronous DRAM Module
|
Mitsubishi Electric Semiconductor
|
| MH28D72KLG-75 MH28D72KLG-10 |
9,663,676,416-BIT (134,217,728-WORD BY 72-BIT) Double Data Rate Synchronous DRAM Module
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| HN27C256G HN27C256G-17 HN27C256G-25 HN27C256G-20 |
256K (32K x 8-bit) UV EPROM, 200ns
256K (32K x 8-bit) UV EPROM, 250ns
32768-WORD x 8-BIT CMOS UV ERASABLE AND PROGRAMMABLE ROM
256K (32K x 8-bit) UV EPROM, 170ns
|
Hitachi Semiconductor
|
| M13S256328A |
2M x 32 Bit x 4 Banks Double Data Rate SDRAM
|
Elite Semiconductor Memory Technology Inc.
|
| M13S64164A-5BG M13S64164A-5TG M13S64164A-6BG M13S6 |
1M x 16 Bit x 4 Banks Double Data Rate SDRAM
|
Elite Semiconductor Memory Technology Inc.
|
| M13S2561616A1 M13S2561616A-5BIG M13S2561616A-5TIG |
4M x 16 Bit x 4 Banks Double Data Rate SDRAM
|
Elite Semiconductor Mem...
Elite Semiconductor Memory Technology Inc.
http://
|
